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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB019N08N3GATMA1

IPB019N08N3GATMA1

IPB019N08N3GATMA1
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number IPB019N08N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 80V 180A TO263-7
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 29284 pcs
Reference Price
(In US Dollars)
1000 pcs
$1.23

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Quantity:
Total:
$1.23

Product parameter

Part Number IPB019N08N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 80V 180A TO263-7 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 29284 pcs Data sheet IPB019N08N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 270µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7 Series OptiMOS™
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 100A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Other Names IPB019N08N3 G
IPB019N08N3 G-ND
IPB019N08N3 GTR-ND
IPB019N08N3G
IPB019N08N3GATMA1TR
Q4136793
SP000444110
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 80V Detailed Description N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Current - Continuous Drain (Id) @ 25°C 180A (Tc)

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