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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > BCR35PNE6327BTSA1

BCR35PNE6327BTSA1

BCR35PNE6327BTSA1
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Part Number BCR35PNE6327BTSA1
Manufacturer International Rectifier (Infineon Technologies)
Description TRANS NPN/PNP PREBIAS SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5185 pcs
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Part Number BCR35PNE6327BTSA1 Manufacturer International Rectifier (Infineon Technologies)
Description TRANS NPN/PNP PREBIAS SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5185 pcs Data sheet BCR35PN
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package PG-SOT363-6 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 250mW Packaging Tape & Reel (TR)
Package / Case 6-VSSOP, SC-88, SOT-363 Other Names BCR 35PN E6327
BCR 35PN E6327-ND
BCR35PNE6327BTSA1TR
BCR35PNE6327XT
SP000010831
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 150MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6 DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 100mA
Base Part Number BCR35PN

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