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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > MIEB101H1200EH

MIEB101H1200EH

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Part Number MIEB101H1200EH
Manufacturer IXYS Corporation
Description IGBT MODULE 1200V 183A QUAD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 852 pcs
Reference Price
(In US Dollars)
5 pcs
$37.186

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Target Price:(USD)
Quantity:
Total:
$37.186

Product parameter

Part Number MIEB101H1200EH Manufacturer IXYS Corporation
Description IGBT MODULE 1200V 183A QUAD Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 852 pcs Data sheet MIEB101H1200EH
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A Supplier Device Package E3
Series - Power - Max 630W
Package / Case E3 Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor No Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Cies) @ Vce 7.43nF @ 25V Input Standard
IGBT Type - Detailed Description IGBT Module Full Bridge Inverter 1200V 183A 630W Chassis Mount E3
Current - Collector Cutoff (Max) 300µA Current - Collector (Ic) (Max) 183A
Configuration Full Bridge Inverter

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