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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTX6N200P3HV

IXTX6N200P3HV

IXTX6N200P3HV
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Part Number IXTX6N200P3HV
Manufacturer IXYS Corporation
Description 2000V TO 3000V POLAR3 POWER MOSF
Lead Free Status / RoHS Status Lead free by exemption / RoHS Compliant
In Stock 1868 pcs
Reference Price
(In US Dollars)
1 pcs30 pcs
$21.225$18.357

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Target Price:(USD)
Quantity:
Total:
$21.225

Product parameter

Part Number IXTX6N200P3HV Manufacturer IXYS Corporation
Description 2000V TO 3000V POLAR3 POWER MOSF Lead Free Status / RoHS Status Lead free by exemption / RoHS Compliant
Quantity Available 1868 pcs Data sheet IXTX6N200P3HV
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247PLUS-HV Series -
Rds On (Max) @ Id, Vgs 4 Ohm @ 3A, 10V Power Dissipation (Max) 960W (Tc)
Packaging Tube Package / Case TO-247-3 Variant
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 24 Weeks
Lead Free Status / RoHS Status Lead free by exemption / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 2000V Detailed Description N-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV
Current - Continuous Drain (Id) @ 25°C 6A (Tc)

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