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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTA3N120

IXTA3N120

IXTA3N120
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Part Number IXTA3N120
Manufacturer IXYS Corporation
Description MOSFET N-CH 1.2KV 3A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 29283 pcs
Reference Price
(In US Dollars)
1 pcs50 pcs100 pcs500 pcs1000 pcs
$2.644$2.124$1.936$1.567$1.322

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$2.644

Product parameter

Part Number IXTA3N120 Manufacturer IXYS Corporation
Description MOSFET N-CH 1.2KV 3A TO-263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 29283 pcs Data sheet IXT(A,P)3N120
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263 (IXTA) Series -
Rds On (Max) @ Id, Vgs 4.5 Ohm @ 1.5A, 10V Power Dissipation (Max) 200W (Tc)
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names Q2023873 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 24 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 1200V
Detailed Description N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263 (IXTA) Current - Continuous Drain (Id) @ 25°C 3A (Tc)

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