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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTA2N100P

IXTA2N100P

IXTA2N100P
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Part Number IXTA2N100P
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 2A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 32281 pcs
Reference Price
(In US Dollars)
50 pcs
$0.935

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Quantity:
Total:
$0.935

Product parameter

Part Number IXTA2N100P Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 2A TO-263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 32281 pcs Data sheet IXT(A,P,Y)2N100P
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4.5V @ 100µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263 (IXTA) Series Polar™
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 500mA, 10V Power Dissipation (Max) 86W (Tc)
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 25V Gate Charge (Qg) (Max) @ Vgs 24.3nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 1000V
Detailed Description N-Channel 1000V 2A (Tc) 86W (Tc) Surface Mount TO-263 (IXTA) Current - Continuous Drain (Id) @ 25°C 2A (Tc)

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