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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTA1N200P3HV

IXTA1N200P3HV

IXTA1N200P3HV
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Part Number IXTA1N200P3HV
Manufacturer IXYS Corporation
Description MOSFET N-CH 2000V 1A TO-263HV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 20734 pcs
Reference Price
(In US Dollars)
1 pcs50 pcs100 pcs500 pcs1000 pcs
$2.659$2.181$1.968$1.649$1.436

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Target Price:(USD)
Quantity:
Total:
$2.659

Product parameter

Part Number IXTA1N200P3HV Manufacturer IXYS Corporation
Description MOSFET N-CH 2000V 1A TO-263HV Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 20734 pcs Data sheet IXTx1N200P3(HV)
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263 (IXTA) Series -
Rds On (Max) @ Id, Vgs 40 Ohm @ 500mA, 10V Power Dissipation (Max) 125W (Tc)
Packaging Tube Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 24 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 2000V Detailed Description N-Channel 2000V 1A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)

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