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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGJ40N60C2D1

IXGJ40N60C2D1

IXGJ40N60C2D1
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Part Number IXGJ40N60C2D1
Manufacturer IXYS Corporation
Description IGBT 600V 75A 300W TO268
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5563 pcs
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Part Number IXGJ40N60C2D1 Manufacturer IXYS Corporation
Description IGBT 600V 75A 300W TO268 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5563 pcs Data sheet IXG(H,J,T)40N60C2D1
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A Test Condition 400V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C 18ns/90ns Switching Energy 200µJ (off)
Supplier Device Package TO-268 Series HiPerFAST™
Reverse Recovery Time (trr) 25ns Power - Max 300W
Packaging Tube Package / Case TO-220-3, Short Tab
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type PT
Gate Charge 95nC Detailed Description IGBT PT 600V 75A 300W Through Hole TO-268
Current - Collector Pulsed (Icm) 200A Current - Collector (Ic) (Max) 75A
Base Part Number IXG*40N60

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