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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP2M005A060PG

GP2M005A060PG

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Part Number	GP2M005A060PG
Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 600V 4.2A IPAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4869 pcs
Reference Price (In US Dollars)	Get a quote

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Data sheet

Product parameter

Part Number	GP2M005A060PG	Manufacturer	Global Power Technologies Group
Description	MOSFET N-CH 600V 4.2A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4869 pcs	Data sheet	GP2M005A060CG, PG(H)
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	5V @ 250µA
Vgs (Max)	±30V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	I-PAK	Series	-
Rds On (Max) @ Id, Vgs	2.1 Ohm @ 2.1A, 10V	Power Dissipation (Max)	98.4W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	658pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	600V
Detailed Description	N-Channel 600V 4.2A (Tc) 98.4W (Tc) Through Hole I-PAK	Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)

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