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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GA10SICP12-263

GA10SICP12-263

GA10SICP12-263
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number GA10SICP12-263
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 25A TO263-7
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 3044 pcs
Reference Price
(In US Dollars)		500 pcs
$10.472

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Total:
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Part Number GA10SICP12-263 Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 25A TO263-7 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3044 pcs Data sheet GA10SICP12-263
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id -
Vgs (Max) - Technology SiC (Silicon Carbide Junction Transistor)
Supplier Device Package D2PAK (7-Lead) Series -
Rds On (Max) @ Id, Vgs 100 mOhm @ 10A Power Dissipation (Max) 170W (Tc)
Packaging Tube Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Other Names 1242-1318
GA10SICP12-263-ND		 Operating Temperature 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V FET Type -
FET Feature - Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 1200V Detailed Description 1200V 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)

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