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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GA10JT12-263

GA10JT12-263

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Part Number	GA10JT12-263
Manufacturer	GeneSiC Semiconductor
Description	TRANS SJT 1200V 25A
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 6276 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	50 pcs	100 pcs	250 pcs
Reference Price (In US Dollars)	$8.469	$7.70	$7.123	$6.545	$5.968

Product parameter
Data sheet

Product parameter

Part Number	GA10JT12-263	Manufacturer	GeneSiC Semiconductor
Description	TRANS SJT 1200V 25A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6276 pcs	Data sheet	GA10JT12-263
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	-
Vgs (Max)	-	Technology	SiC (Silicon Carbide Junction Transistor)
Supplier Device Package	-	Series	-
Rds On (Max) @ Id, Vgs	120 mOhm @ 10A	Power Dissipation (Max)	170W (Tc)
Packaging	Tube	Package / Case	-
Other Names	1242-1186 GA10JT12-220ISO GA10JT12220ISO	Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	18 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1403pF @ 800V	FET Type	-
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	-
Drain to Source Voltage (Vdss)	1200V	Detailed Description	1200V 25A (Tc) 170W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25°C	25A (Tc)

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