MB85R256GPF-G-BNDE1
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| Part Number | MB85R256GPF-G-BNDE1 |
|---|---|
| Manufacturer | Fujitsu Electronics America, Inc. |
| Description | IC FRAM 256K PARALLEL 28SOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
Product parameter
| Part Number | MB85R256GPF-G-BNDE1 | Manufacturer | Fujitsu Electronics America, Inc. |
|---|---|---|---|
| Description | IC FRAM 256K PARALLEL 28SOP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4182 pcs | Data sheet | |
| Category | Integrated Circuits (ICs) | Write Cycle Time - Word, Page | 150ns |
| Voltage - Supply | 2.7 V ~ 3.6 V | Technology | FRAM (Ferroelectric RAM) |
| Series | - | Operating Temperature | -40°C ~ 85°C (TA) |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | Memory Type | Non-Volatile |
| Memory Size | 256Kb (32K x 8) | Memory Interface | Parallel |
| Memory Format | FRAM | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns | Access Time | 150ns |
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