SIS782DN-T1-GE3
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See Product Specifications for product details.
Buy SIS782DN-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIS782DN-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 30V 16A POWERPAK1212 |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 3000 pcs | ||||
|---|---|---|---|---|---|
| $0.096 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIS782DN-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 30V 16A POWERPAK1212 | Lead Free Status / RoHS Status | |
| Quantity Available | 232281 pcs | Data sheet | SIS782DN |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Vgs (Max) | ±20V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8 | Series | - |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10A, 10V | Power Dissipation (Max) | 41W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | PowerPAK® 1212-8 |
| Other Names | SIS782DN-T1-GE3-ND SIS782DN-T1-GE3TR |
Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 1025pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V | FET Type | N-Channel |
| FET Feature | Schottky Diode (Body) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V | Detailed Description | N-Channel 30V 16A (Tc) 41W (Tc) Surface Mount PowerPAK® 1212-8 |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
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