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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIS429DNT-T1-GE3

SIS429DNT-T1-GE3

SIS429DNT-T1-GE3

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Part Number	SIS429DNT-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 30V 20A POWERPAK1212
Lead Free Status / RoHS Status

~~In Stock~~ 377093 pcs
Reference Price (In US Dollars)	6000 pcs
Reference Price (In US Dollars)	$0.055

Product parameter
Data sheet

Product parameter

Part Number	SIS429DNT-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 30V 20A POWERPAK1212	Lead Free Status / RoHS Status
Quantity Available	377093 pcs	Data sheet	SIS429DNT
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® 1212-8	Series	-
Rds On (Max) @ Id, Vgs	21 mOhm @ 10.5A, 10V	Power Dissipation (Max)	27.8W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	PowerPAK® 1212-8
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Manufacturer Standard Lead Time	32 Weeks	Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	P-Channel 30V 20A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C	20A (Tc)

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