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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIR108DP-T1-RE3

SIR108DP-T1-RE3

SIR108DP-T1-RE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SIR108DP-T1-RE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 100V POWERPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 80539 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.291

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Target Price:(USD)
Quantity:
Total:
$0.291

Product parameter

Part Number SIR108DP-T1-RE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 100V POWERPAK SO-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 80539 pcs Data sheet SIR108DP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.6V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 13.5 mOhm @ 10A, 10V Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Packaging Tape & Reel (TR) Package / Case PowerPAK® SO-8
Other Names SIR108DP-RE3
SIR108DP-T1-RE3TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 50V Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 12.4A (Ta), 45A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 12.4A (Ta), 45A (Tc)

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