SIHP11N80E-GE3
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See Product Specifications for product details.
Buy SIHP11N80E-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIHP11N80E-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 800V 12A TO220AB |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 1 pcs | 10 pcs | 100 pcs | 500 pcs | 1000 pcs |
|---|---|---|---|---|---|
| $1.494 | $1.333 | $1.093 | $0.885 | $0.746 | |
- Product parameter
- Data sheet
Product parameter
| Part Number | SIHP11N80E-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 800V 12A TO220AB | Lead Free Status / RoHS Status | |
| Quantity Available | 48173 pcs | Data sheet | SIHP11N80E |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220AB | Series | E |
| Rds On (Max) @ Id, Vgs | 440 mOhm @ 5.5A, 10V | Power Dissipation (Max) | 179W (Tc) |
| Packaging | Tube | Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 1670pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800V | Detailed Description | N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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