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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHG28N65EF-GE3

SIHG28N65EF-GE3

SIHG28N65EF-GE3
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Part Number SIHG28N65EF-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 28A TO-247AC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 23824 pcs
Reference Price
(In US Dollars)
1 pcs25 pcs100 pcs500 pcs1000 pcs
$2.94$2.364$2.154$1.744$1.471

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Target Price:(USD)
Quantity:
Total:
$2.94

Product parameter

Part Number SIHG28N65EF-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 28A TO-247AC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 23824 pcs Data sheet SIHG28N65EF
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247AC Series -
Rds On (Max) @ Id, Vgs 117 mOhm @ 14A, 10V Power Dissipation (Max) 250W (Tc)
Packaging Tube Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3249pF @ 100V Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 650V
Detailed Description N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-247AC Current - Continuous Drain (Id) @ 25°C 28A (Tc)

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