SIHD6N65ET4-GE3
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See Product Specifications for product details.
Buy SIHD6N65ET4-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIHD6N65ET4-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 650V 7A TO252AA |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 2000 pcs | ||||
|---|---|---|---|---|---|
| $0.295 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIHD6N65ET4-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 650V 7A TO252AA | Lead Free Status / RoHS Status | |
| Quantity Available | 76068 pcs | Data sheet | SIHD6N65E-GE3 |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-252AA | Series | E |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 3A, 10V | Power Dissipation (Max) | 78W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V | Detailed Description | N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount TO-252AA |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
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