SIHB24N65ET1-GE3
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See Product Specifications for product details.
Buy SIHB24N65ET1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIHB24N65ET1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 650V 24A TO263 |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 800 pcs | ||||
|---|---|---|---|---|---|
| $1.291 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIHB24N65ET1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 650V 24A TO263 | Lead Free Status / RoHS Status | |
| Quantity Available | 26907 pcs | Data sheet | SiHB24N65E |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-263 (D²Pak) | Series | E |
| Rds On (Max) @ Id, Vgs | 145 mOhm @ 12A, 10V | Power Dissipation (Max) | 250W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 2740pF @ 100V | Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak) | Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
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