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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHA11N80E-GE3

SIHA11N80E-GE3

SIHA11N80E-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number SIHA11N80E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 800V TO-220FP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 41412 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$1.486$1.328$1.089$0.881$0.743

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Target Price:(USD)
Quantity:
Total:
$1.486

Product parameter

Part Number SIHA11N80E-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 800V TO-220FP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 41412 pcs Data sheet SIHA11N80E
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220 Full Pack Series E
Rds On (Max) @ Id, Vgs 440 mOhm @ 5.5A, 10V Power Dissipation (Max) 34W (Tc)
Packaging Tube Package / Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 12A (Tc) 34W (Tc) Through Hole TO-220 Full Pack Current - Continuous Drain (Id) @ 25°C 12A (Tc)

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