SIA850DJ-T1-GE3
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See Product Specifications for product details.
Buy SIA850DJ-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIA850DJ-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 190V 0.95A SC70-6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIA850DJ-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 190V 0.95A SC70-6 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4152 pcs | Data sheet | SIA850DJ |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Vgs (Max) | ±16V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SC-70-6 Dual | Series | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 360mA, 4.5V | Power Dissipation (Max) | 1.9W (Ta), 7W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | PowerPAK® SC-70-6 Dual |
| Other Names | SIA850DJ-T1-GE3-ND SIA850DJ-T1-GE3TR SIA850DJT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V | FET Type | N-Channel |
| FET Feature | Schottky Diode (Isolated) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 190V | Detailed Description | N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
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