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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

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Part Number	SIA485DJ-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CHANNEL 150V 1.6A
Lead Free Status / RoHS Status

~~In Stock~~ 259373 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.079

Product parameter
Data sheet

Product parameter

Part Number	SIA485DJ-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CHANNEL 150V 1.6A	Lead Free Status / RoHS Status
Quantity Available	259373 pcs	Data sheet	SIA485DJ
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	4.5V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® SC-70-6 Single	Series	-
Rds On (Max) @ Id, Vgs	2.6 Ohm @ 500mA, 10V	Power Dissipation (Max)	15.6W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	PowerPAK® SC-70-6
Other Names	SIA485DJ-T1-GE3-ND SIA485DJ-T1-GE3TR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	22 Weeks	Input Capacitance (Ciss) (Max) @ Vds	155pF @ 75V
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 10V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	150V	Detailed Description	P-Channel 150V 1.6A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)

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