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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI9926BDY-T1-GE3

SI9926BDY-T1-GE3

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Part Number	SI9926BDY-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 20V 6.2A 8-SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4703 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI9926BDY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 20V 6.2A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4703 pcs	Data sheet	SI9926BDY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SO	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	20 mOhm @ 8.2A, 4.5V	Power - Max	1.14W
Packaging	Tape & Reel (TR)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	-	Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
FET Type	2 N-Channel (Dual)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	Detailed Description	Mosfet Array 2 N-Channel (Dual) 20V 6.2A 1.14W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C	6.2A	Base Part Number	SI9926

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