SI8469DB-T2-E1
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See Product Specifications for product details.
Buy SI8469DB-T2-E1 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI8469DB-T2-E1 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 8V 3.6A MICRO |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI8469DB-T2-E1 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET P-CH 8V 3.6A MICRO | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 5329 pcs | Data sheet | SI8469DB-T2-E1 |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Vgs (Max) | ±5V | Technology | MOSFET (Metal Oxide) |
| Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 64 mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) | Packaging | Cut Tape (CT) |
| Package / Case | 4-UFBGA | Other Names | SI8469DB-T2-E1CT |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 4V | Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Type | P-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V | Drain to Source Voltage (Vdss) | 8V |
| Detailed Description | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount | Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
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