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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI7998DP-T1-GE3

SI7998DP-T1-GE3

SI7998DP-T1-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SI7998DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 25A PPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 82589 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.683$0.604$0.477$0.37$0.292

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Target Price:(USD)
Quantity:
Total:
$0.683

Product parameter

Part Number SI7998DP-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 25A PPAK SO-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 82589 pcs Data sheet SI7998DP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8 Dual Series TrenchFET®
Rds On (Max) @ Id, Vgs 9.3 mOhm @ 15A, 10V Power - Max 22W, 40W
Packaging Cut Tape (CT) Package / Case PowerPAK® SO-8 Dual
Other Names SI7998DP-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual Current - Continuous Drain (Id) @ 25°C 25A, 30A

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