SI7882DP-T1-GE3
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See Product Specifications for product details.
Buy SI7882DP-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI7882DP-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 12V 13A PPAK SO-8 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI7882DP-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 12V 13A PPAK SO-8 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4132 pcs | Data sheet | SI7882DP |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Vgs (Max) | ±8V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 17A, 4.5V | Power Dissipation (Max) | 1.9W (Ta) |
| Packaging | Cut Tape (CT) | Package / Case | PowerPAK® SO-8 |
| Other Names | SI7882DP-T1-GE3CT | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | Drain to Source Voltage (Vdss) | 12V |
| Detailed Description | N-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 | Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
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