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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI7846DP-T1-GE3

SI7846DP-T1-GE3

SI7846DP-T1-GE3
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Part Number SI7846DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 150V 4A PPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 73718 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.519

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Target Price:(USD)
Quantity:
Total:
$0.519

Product parameter

Part Number SI7846DP-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 150V 4A PPAK SO-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 73718 pcs Data sheet SI7846DP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SO-8 Series TrenchFET®
Rds On (Max) @ Id, Vgs 50 mOhm @ 5A, 10V Power Dissipation (Max) 1.9W (Ta)
Packaging Tape & Reel (TR) Package / Case PowerPAK® SO-8
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 150V
Detailed Description N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 4A (Ta)

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