SI7703EDN-T1-GE3
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See Product Specifications for product details.
Buy SI7703EDN-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI7703EDN-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 20V 4.3A 1212-8 PPAK |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI7703EDN-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET P-CH 20V 4.3A 1212-8 PPAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 5507 pcs | Data sheet | SI7703EDN |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 1V @ 800µA |
| Vgs (Max) | ±12V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8 | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 48 mOhm @ 6.3A, 4.5V | Power Dissipation (Max) | 1.3W (Ta) |
| Packaging | Tape & Reel (TR) | Package / Case | PowerPAK® 1212-8 |
| Other Names | SI7703EDN-T1-GE3TR SI7703EDNT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Type | P-Channel | FET Feature | Schottky Diode (Isolated) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | P-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8 | Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
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