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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI7601DN-T1-E3

SI7601DN-T1-E3

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Part Number	SI7601DN-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 16A 1212-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4331 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI7601DN-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 16A 1212-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4331 pcs	Data sheet	SI7601DN
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.6V @ 250µA
Vgs (Max)	±12V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® 1212-8	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	19.2 mOhm @ 11A, 4.5V	Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	PowerPAK® 1212-8
Operating Temperature	-50°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	27nC @ 5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8	Current - Continuous Drain (Id) @ 25°C	16A (Tc)

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