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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI7411DN-T1-GE3

SI7411DN-T1-GE3

SI7411DN-T1-GE3
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Part Number SI7411DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 7.5A 1212-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4517 pcs
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Part Number SI7411DN-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 7.5A 1212-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4517 pcs Data sheet Si7411DN
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 300µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8 Series TrenchFET®
Rds On (Max) @ Id, Vgs 19 mOhm @ 11.4A, 4.5V Power Dissipation (Max) 1.5W (Ta)
Packaging Tape & Reel (TR) Package / Case PowerPAK® 1212-8
Other Names SI7411DN-T1-GE3TR
SI7411DNT1GE3		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Gate Charge (Qg) (Max) @ Vgs 41nC @ 4.5V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 7.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8 Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)

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