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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI7120DN-T1-GE3

SI7120DN-T1-GE3

SI7120DN-T1-GE3
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Part Number SI7120DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 60V 6.3A 1212-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5992 pcs
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Part Number SI7120DN-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 60V 6.3A 1212-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5992 pcs Data sheet Si7120DN
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8 Series TrenchFET®
Rds On (Max) @ Id, Vgs 19 mOhm @ 10A, 10V Power Dissipation (Max) 1.5W (Ta)
Packaging Original-Reel® Package / Case PowerPAK® 1212-8
Other Names SI7120DN-T1-GE3DKR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 6.3A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8 Current - Continuous Drain (Id) @ 25°C 6.3A (Ta)

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