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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI6963BDQ-T1-GE3

SI6963BDQ-T1-GE3

SI6963BDQ-T1-GE3

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Part Number	SI6963BDQ-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2P-CH 20V 3.4A 8-TSSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4247 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI6963BDQ-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2P-CH 20V 3.4A 8-TSSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4247 pcs	Data sheet	Si6963BDQ
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	8-TSSOP	Series	-
Rds On (Max) @ Id, Vgs	45 mOhm @ 3.9A, 4.5V	Power - Max	830mW
Packaging	Cut Tape (CT)	Package / Case	8-TSSOP (0.173", 4.40mm Width)
Other Names	SI6963BDQ-T1-GE3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V	FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Detailed Description	Mosfet Array 2 P-Channel (Dual) 20V 3.4A 830mW Surface Mount 8-TSSOP	Current - Continuous Drain (Id) @ 25°C	3.4A
Base Part Number	SI6963

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