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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI6463BDQ-T1-GE3

SI6463BDQ-T1-GE3

SI6463BDQ-T1-GE3

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Part Number	SI6463BDQ-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 6.2A 8-TSSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4038 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI6463BDQ-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 6.2A 8-TSSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4038 pcs	Data sheet	Si6463BDQ
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	800mV @ 250µA
Vgs (Max)	±8V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-TSSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	15 mOhm @ 7.4A, 4.5V	Power Dissipation (Max)	1.05W (Ta)
Packaging	Original-Reel®	Package / Case	8-TSSOP (0.173", 4.40mm Width)
Other Names	SI6463BDQ-T1-GE3DKR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	60nC @ 5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP	Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)

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