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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5908DC-T1-E3

SI5908DC-T1-E3

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Part Number	SI5908DC-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 20V 4.4A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 96209 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.227

Product parameter
Data sheet

Product parameter

Part Number	SI5908DC-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 20V 4.4A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	96209 pcs	Data sheet	SI5908DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	40 mOhm @ 4.4A, 4.5V	Power - Max	1.1W
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Other Names	SI5908DC-T1-E3TR SI5908DCT1E3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	33 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	-	Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
FET Type	2 N-Channel (Dual)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	Detailed Description	Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C	4.4A	Base Part Number	SI5908

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