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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

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Part Number SI4963BDY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 20V 4.9A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 70874 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.308

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Target Price:(USD)
Quantity:
Total:
$0.308

Product parameter

Part Number SI4963BDY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 20V 4.9A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 70874 pcs Data sheet SI4963BDY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.4V @ 250µA
Supplier Device Package 8-SO Series -
Rds On (Max) @ Id, Vgs 32 mOhm @ 6.5A, 4.5V Power - Max 1.1W
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 4.9A
Base Part Number SI4963

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