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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4943CDY-T1-GE3

SI4943CDY-T1-GE3

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Part Number SI4943CDY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 20V 8A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 65520 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.724$0.654$0.525$0.409$0.339

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Product parameter

Part Number SI4943CDY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 20V 8A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 65520 pcs Data sheet SI4943CDY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 19.2 mOhm @ 8.3A, 10V Power - Max 3.1W
Packaging Original-Reel® Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4943CDY-T1-GE3DKR Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 8A
Base Part Number SI4943

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