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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4900DY-T1-E3

SI4900DY-T1-E3

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Part Number	SI4900DY-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 60V 5.3A 8-SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 98858 pcs
Reference Price (In US Dollars)	2500 pcs
Reference Price (In US Dollars)	$0.209

Product parameter
Data sheet

Product parameter

Part Number	SI4900DY-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 60V 5.3A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	98858 pcs	Data sheet	SI4900DY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	8-SO	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	58 mOhm @ 4.3A, 10V	Power - Max	3.1W
Packaging	Tape & Reel (TR)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Other Names	SI4900DY-T1-E3TR SI4900DYT1E3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	33 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 15V	Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
FET Type	2 N-Channel (Dual)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V	Detailed Description	Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C	5.3A	Base Part Number	SI4900

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