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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4814BDY-T1-GE3

SI4814BDY-T1-GE3

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Part Number	SI4814BDY-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 30V 10A 8SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4399 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI4814BDY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 30V 10A 8SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4399 pcs	Data sheet	SI4814BDY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	8-SO	Series	LITTLE FOOT®
Rds On (Max) @ Id, Vgs	18 mOhm @ 10A, 10V	Power - Max	3.3W, 3.5W
Packaging	Tape & Reel (TR)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	-	Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
FET Type	2 N-Channel (Half Bridge)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	Detailed Description	Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C	10A, 10.5A

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