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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4778DY-T1-GE3

SI4778DY-T1-GE3

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Part Number SI4778DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 25V 8A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 238808 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.096

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Target Price:(USD)
Quantity:
Total:
$0.096

Product parameter

Part Number SI4778DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 25V 8A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 238808 pcs Data sheet SI4778DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±16V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 23 mOhm @ 7A, 10V Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4778DY-T1-GE3TR
SI4778DYT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 680pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25V Detailed Description N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 8A (Tc)

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