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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4712DY-T1-GE3

SI4712DY-T1-GE3

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Part Number SI4712DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 14.6A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4584 pcs
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Part Number SI4712DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 14.6A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4584 pcs Data sheet SI4712DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series SkyFET®, TrenchFET®
Rds On (Max) @ Id, Vgs 13 mOhm @ 15A, 10V Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4712DY-T1-GE3-ND
SI4712DY-T1-GE3TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1084pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 14.6A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 14.6A (Tc)

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