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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4599DY-T1-GE3

SI4599DY-T1-GE3

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Part Number SI4599DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 40V 6.8A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 148920 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.384$0.336$0.259$0.192$0.154

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$0.384

Product parameter

Part Number SI4599DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 40V 6.8A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 148920 pcs Data sheet SI4599DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 35.5 mOhm @ 5A, 10V Power - Max 3W, 3.1W
Packaging Cut Tape (CT) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4599DY-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V FET Type N and P-Channel
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V
Detailed Description Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 6.8A, 5.8A
Base Part Number SI4599

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