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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4398DY-T1-GE3

SI4398DY-T1-GE3

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Part Number	SI4398DY-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 19A 8-SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5377 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI4398DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 19A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5377 pcs	Data sheet	SI4398DY
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-SO	Series	-
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 25A, 10V	Power Dissipation (Max)	1.6W (Ta)
Packaging	Tape & Reel (TR)	Package / Case	8-SOIC (0.154", 3.90mm Width)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	5620pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-SO	Current - Continuous Drain (Id) @ 25°C	19A (Ta)

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