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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4210DY-T1-GE3

SI4210DY-T1-GE3

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Part Number SI4210DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 6.5A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 193263 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.106

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Target Price:(USD)
Quantity:
Total:
$0.106

Product parameter

Part Number SI4210DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 6.5A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 193263 pcs Data sheet SI4210DY
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SO Series TrenchFET®
Rds On (Max) @ Id, Vgs 35.5 mOhm @ 5A, 10V Power - Max 2.7W
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4210DY-T1-GE3-ND
SI4210DY-T1-GE3TR
SI4210DYT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 6.5A 2.7W Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 6.5A
Base Part Number SI4210

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