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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3467DV-T1-GE3

SI3467DV-T1-GE3

SI3467DV-T1-GE3

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Part Number	SI3467DV-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 3.8A 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 322752 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.075

Product parameter
Data sheet

Product parameter

Part Number	SI3467DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 3.8A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	322752 pcs	Data sheet	SI3467DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	3V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	54 mOhm @ 5A, 10V	Power Dissipation (Max)	1.14W (Ta)
Packaging	Tape & Reel (TR)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	15 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 3.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)

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