SI3410DV-T1-E3
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See Product Specifications for product details.
Buy SI3410DV-T1-E3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SI3410DV-T1-E3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 30V 8A 6-TSOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SI3410DV-T1-E3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 30V 8A 6-TSOP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4577 pcs | Data sheet | SI3410DV |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±20V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-TSOP | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 19.5 mOhm @ 5A, 10V | Power Dissipation (Max) | 2W (Ta), 4.1W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1295pF @ 15V | Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP | Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
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