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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

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Part Number SI1922EDH-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 20V 1.3A SOT-363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 298783 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.187$0.156$0.117$0.086$0.067

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$0.187

Product parameter

Part Number SI1922EDH-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 20V 1.3A SOT-363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 298783 pcs Data sheet Si1922EDH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SC-70-6 (SOT-363) Series TrenchFET®
Rds On (Max) @ Id, Vgs 198 mOhm @ 1A, 4.5V Power - Max 1.25W
Packaging Cut Tape (CT) Package / Case 6-TSSOP, SC-88, SOT-363
Other Names SI1922EDH-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 8V FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363) Current - Continuous Drain (Id) @ 25°C 1.3A
Base Part Number SI1922

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