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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI1067X-T1-GE3

SI1067X-T1-GE3

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Part Number	SI1067X-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 1.06A SC89-6
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5048 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI1067X-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 1.06A SC89-6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5048 pcs	Data sheet	SI1067X
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	950mV @ 250µA
Vgs (Max)	±8V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	SC-89-6	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	150 mOhm @ 1.06A, 4.5V	Power Dissipation (Max)	236mW (Ta)
Packaging	Tape & Reel (TR)	Package / Case	SOT-563, SOT-666
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 236mW (Ta) Surface Mount SC-89-6	Current - Continuous Drain (Id) @ 25°C	-

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