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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI1050X-T1-E3

SI1050X-T1-E3

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Part Number	SI1050X-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 8V 1.34A SOT563F
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5510 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI1050X-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 8V 1.34A SOT563F	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5510 pcs	Data sheet	SI1050X
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	900mV @ 250µA
Vgs (Max)	±5V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	SC-89-6	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	86 mOhm @ 1.34A, 4.5V	Power Dissipation (Max)	236mW (Ta)
Packaging	Original-Reel®	Package / Case	SOT-563, SOT-666
Other Names	SI1050X-T1-E3DKR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	585pF @ 4V
Gate Charge (Qg) (Max) @ Vgs	11.6nC @ 5V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Drain to Source Voltage (Vdss)	8V	Detailed Description	N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89-6
Current - Continuous Drain (Id) @ 25°C	1.34A (Ta)

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