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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > MMDT5551-7

MMDT5551-7

MMDT5551-7
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Part Number MMDT5551-7
Manufacturer Diodes Incorporated
Description TRANS 2NPN 160V 0.2A SOT363
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 4438 pcs
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Part Number MMDT5551-7 Manufacturer Diodes Incorporated
Description TRANS 2NPN 160V 0.2A SOT363 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 4438 pcs Data sheet MMDT5551
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Transistor Type 2 NPN (Dual)
Supplier Device Package SOT-363 Series -
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names MMDT5551DITR
MMDT5551TR
MMDT5551TR-ND
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition 300MHz Detailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 50nA (ICBO)
Current - Collector (Ic) (Max) 200mA Base Part Number MMDT5551

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