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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMG4N65CTI

DMG4N65CTI

DMG4N65CTI
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number DMG4N65CTI
Manufacturer Diodes Incorporated
Description MOSFET N-CH 650V 4A ITO-220AB
Lead Free Status / RoHS Status Contains lead / RoHS Compliant
In Stock 67387 pcs
Reference Price
(In US Dollars)
1 pcs
$0.555

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Total:
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Product parameter

Part Number DMG4N65CTI Manufacturer Diodes Incorporated
Description MOSFET N-CH 650V 4A ITO-220AB Lead Free Status / RoHS Status Contains lead / RoHS Compliant
Quantity Available 67387 pcs Data sheet DMG4N65CTI
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package ITO-220AB Series -
Rds On (Max) @ Id, Vgs 3 Ohm @ 2A, 10V Power Dissipation (Max) 8.35W (Ta)
Packaging Tube Package / Case TO-220-3 Full Pack, Isolated Tab
Other Names DMG4N65CTIDI Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Contains lead / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 650V
Detailed Description N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB Current - Continuous Drain (Id) @ 25°C 4A (Tc)

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